Deepak Kumar Sharma
| Department | Electronics and Communication Engineering |
| Designation | Assistant Professor |
| Qualification | B.Tech, BBDIT Ghaziabad MS Research, IIT Mandi PhD , IIT Roorkee, Former Scientist (ISRO Bangalore), All India Rank:1 (ISRO Entrance for Scientist) |
| Research Interests | Nanoscale MOSFETs, MEMS Inertial Sensors, MEMS based Quadrupole Mass Spectrometer, Thin Film Transistors |
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deepaksk@pec.edu.in ( Official )
deepaksk1526@gmail.com ( Personal ) |
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| Phone Number |
9389585817 ( Resdence ) |
| Sr. No. | Title |
|---|---|
| 21 | J John, Deepak Kumar Sharma et. al. “Instrument for Lunar Seismic Activity Studies on Chandrayaan-2 Lander” Current Science, vol. 118, Issue 3, pp. 00113891, 2020 |
| 22 | Anitha B, Deepak Kumar Sharma et. al. “Computational study on ion dynamics of MEMS quadrupole mass filter” Manufacturing Technology Today, vol. 18, Issue. 10, 2020 |
| 23 | Deepak Kumar Sharma, Arnab Datta “Oxide Edge Trap Density Extraction in Silicon Nanowire MOSFET from Tunnel Current Noise Measurement in Gated Diode like Arrangement” IEEE Transactions on Device and Materials Reliability, vol. 20, Issue 3, pp. 512 – 516, 2020 |
| 24 | Deepak Kumar Sharma, Arnab Datta “Impact of Varying Strain Energy in Oxide on Random Telegraph Noise and Associated Time Constants in Silicon Nanowire pMOSFETs” IEEE Transactions on Electron Devices, vol. 66, Issue 3, pp. 1489 – 1494, 2019 |
| 25 | Deepak K. Sharma, Ranjith Kumar Goud, Arnab Datta, Sanjeev Manhas “Field Stress Influenced Conduction Behavior of Narrow Diameter Gate-All-Around (GAA) Silicon Nanowire n-MOSFET” IEEE/TMS Journal of Electronic Materials, vol 48, Issue 12, pp 7674-7679, 2019 |
| Sr. No. | Title | Agency | Duration of Years |
|---|---|---|---|
| 1 | Member, DST PURSE Grant 2025 | Department of Science and Technology, Government of India, Funding 7.5 Cr | 5 |
| 2 | Simulation framework for Miniature Mass Spectrometsers | PEC Research Initiation Grant, Funding 10 Lakhs | 2 |
| 3 | Thin Film based Faraday Cup integrated with Thin Film Transistors for low Ion Current Measurements in Miniature Mass Spectrometers | Bhabha atomic research centre, Board of research in nuclear sciences (BRNS), Funding: 45 Lakhs | 3 |
| 4 | Fabrication of Source Gated Thin Film Transistors for Sensor Interfaces | INUP-i2i, IIT Delhi | 1 |
| 5 | Development of MEMS based Mass Spectrometer | Department of Space (Inhouse Project) | 3 |
| Sr. No. | Society | Duration |
|---|---|---|
| 1 | IEEE |