Deepak Kumar Sharma
| Department | Electronics and Communication Engineering |
| Designation | Assistant Professor |
| Qualification | B.Tech, BBDIT Ghaziabad MS Research, IIT Mandi PhD , IIT Roorkee, Former Scientist (ISRO Bangalore), All India Rank:1 (ISRO Entrance for Scientist) |
| Research Interests | Nanoscale MOSFETs, MEMS Inertial Sensors, MEMS based Quadrupole Mass Spectrometer, Thin Film Transistors |
|
deepaksk@pec.edu.in ( Official )
deepaksk1526@gmail.com ( Personal ) |
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| Phone Number |
9389585817 ( Resdence ) |
| Sr. No. | Title |
|---|---|
| 6 | Soni, Shakshi, Deepak K. Sharma et al. "Conduction Mechanism in Standard Schottky Barrier Thin Film Transistors and Source Gated Transistors at High Drain Electric Fields." 2024 IEEE 5th India Council International Subsections Conference (INDISCON). IEEE, 2024. |
| 7 | Sharma, Deepak K., et al. "Understanding Trap-Induced Barrier Height Fluctuations in Nickel-Silicon Contacts for Advanced Semiconductor Technology." 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2024. |
| 8 | Sharma, B., Sharma, D. K.,et. al. "InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications" In 2023 International Conference on Microelectronics (ICM) (pp. 145-148). IEEE. |
| 9 | Deepak K.Sharma, and Vivek Kumar. "Impact of heavy ions on a-Si: H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide." Memories-Materials, Devices, Circuits and Systems (2023): 100096. |
| 10 | Vivek Kumar, Amit Kumar Singh Chauhan, Deepak Kumar Sharma "Investigation of Influence of Temperature on Low-Frequency Noise in Neuromorphic Computation", Accepted in IWPSD 2023, IIT Madras |
| Sr. No. | Title | Agency | Duration of Years |
|---|---|---|---|
| 1 | Member, DST PURSE Grant 2025 | Department of Science and Technology, Government of India, Funding 7.5 Cr | 5 |
| 2 | Simulation framework for Miniature Mass Spectrometsers | PEC Research Initiation Grant, Funding 10 Lakhs | 2 |
| 3 | Thin Film based Faraday Cup integrated with Thin Film Transistors for low Ion Current Measurements in Miniature Mass Spectrometers | Bhabha atomic research centre, Board of research in nuclear sciences (BRNS), Funding: 45 Lakhs | 3 |
| 4 | Fabrication of Source Gated Thin Film Transistors for Sensor Interfaces | INUP-i2i, IIT Delhi | 1 |
| 5 | Development of MEMS based Mass Spectrometer | Department of Space (Inhouse Project) | 3 |
| Sr. No. | Society | Duration |
|---|---|---|
| 1 | IEEE |