Name of the Equipment
Reactive Ion Etching (RIE)
Equipment Image
Faculty Incharge
Dr. Arun Kumar Singh
Description
Capable to handle wafers up to 4” dia. Utilizes RF power of 600 watts at frequency 13.56 MHz with dark space shield to avoid parasitic plasma Electro-pneumatically controlled valves with interlocking Option to select different gases (maximum 4)
Location
Semiconductor Research Centre
Status of Equipment
Working
Purchased from Institute fund/ Project grant/ others
DST-FIST
Department
Electronics & Communication Engineering