GaN HEMTs FOR HIGH FREQUENCY APPLICATIONS

We have developed physics-based analytical models are developed for GaN HEMTs which consider the effect of nanostructural miniaturisation on intrinsic material properties in addition to various other performance degradation phenomena such as trapping effect, change in threshold voltage, self-heating, and mobility degradation, velocity saturation and noise. The developed model has been utilised to evaluate the threshold voltage of the devices in addition to evaluating their noise properties namely thermal noise, flicker noise etc. The model has been validated by comparing the experimental results of various heterostructures such as AlGaN/GaN, AlGaAs/GaAs and InAlN/GaN with the modelled results. The modelled results are in agreement with the experimental results, thus validating the proposed model.

DOI: https://doi.org/10.1016/j.spmi.2021.106834; https://doi.org/10.1088/1361-6641/abd265; https://doi.org/10.1007/s41870-019-00348-0; https://doi.org/10.1016/j.spmi.2019.04.040